MUN5335DW1T1

Specifications

Qualification Status

COMMERCIAL

Resistor Emitter Base R2

47k Ω

Terminal Formu

GULL WING

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Currentcollector Ic Max

100mA

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Montaj Tipi

Surface Mount

JESD-609 Kodu

e0

Pin Sayısı

6

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Yüzey Montaj

YES

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Power Max

385mW

Terminal Kaplaması

TIN LEAD

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Kurşunsuz Kodu

no

Voltage Collector Emitter Breakdown Max

50V

Terminal Sayısı

6

Additional Feature

BUILT-IN BIAS RESISTOR RATIO 21.36

Jesd30 Code

R-PDSO-G6

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Current Collector Cutoff Max

500nA

Resistor Base R1

2.2k Ω

Transistor Application

SWITCHING

Parça Durumu

Obsolete

Polaritychannel Type

NPN AND PNP

RoHS Durumu

Non-RoHS Compliant

Number Of Elements

2