MUN5314DW1T1

Specifications

Currentcollector Ic Max

100mA

Montaj Tipi

Surface Mount

JESD-609 Kodu

e0

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Transistor Element Material

SILICON

Resistor Emitter Base R2

47k Ω

Qualification Status

COMMERCIAL

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Terminal Formu

GULL WING

Terminal Kaplaması

TIN LEAD

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Voltage Collector Emitter Breakdown Max

50V

Kurşunsuz Kodu

no

Pin Sayısı

6

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Power Max

385mW

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Yüzey Montaj

YES

Tepe Reflow Sıcaklığı (°C)

240

Tepe Reflow Süresi (maks. sn)

30

Current Collector Cutoff Max

500nA

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

6

Jesd30 Code

R-PDSO-G6

Additional Feature

BUILT-IN BIAS RESISTOR RATIO 4.7

Number Of Elements

2

RoHS Durumu

Non-RoHS Compliant

Transistor Application

SWITCHING

Resistor Base R1

10k Ω

Parça Durumu

Obsolete

Polaritychannel Type

NPN AND PNP