MUN5133DW1T1

Specifications

Tepe Reflow Sıcaklığı (°C)

240

Voltage Collector Emitter Breakdown Max

50V

Resistor Emitter Base R2

47k Ω

Jesd30 Code

R-PDSO-G6

Yüzey Montaj

YES

RoHS Durumu

Non-RoHS Compliant

Currentcollector Ic Max

100mA

Parça Durumu

Obsolete

Number Of Elements

2

Montaj Tipi

Surface Mount

Terminal Sayısı

6

Current Collector Cutoff Max

500nA

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

30

Pin Sayısı

6

JESD-609 Kodu

e0

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vce Saturation Max Ib Ic

250mV @ 1mA, 10mA

Qualification Status

COMMERCIAL

Transistor Application

SWITCHING

Resistor Base R1

4.7k Ω

Kurşunsuz Kodu

yes

Terminal Kaplaması

TIN LEAD

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Power Max

385mW

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 10

Polaritychannel Type

PNP

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Transistor Type

2 PNP - Pre-Biased (Dual)