MUN5114DW1T1

Specifications

Transistor Type

2 PNP - Pre-Biased (Dual)

Collector Emitter Voltage Vceo

250mV

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Terminal Kaplaması

TIN LEAD

Transistor Element Material

SILICON

Pin Sayısı

6

Ambalaj

Tape & Reel (TR)

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Yayın Yılı

2009

Tepe Reflow Süresi (maks. sn)

30

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Current Collector Cutoff Max

500nA

REACH Uyumluluk Kodu

not_compliant

Voltage Rated Dc

-50V

RoHS Durumu

Non-RoHS Compliant

Number Of Elements

2

Parça Durumu

Obsolete

Max Collector Current

100mA

Resistor Emitter Base R2

47k Ω

Jesd30 Code

R-PDSO-G6

Montaj

Surface Mount

Continuous Collector Current

-100mA

Polarity

PNP

Min. Çalışma Sıcaklığı

-55°C

Voltage Collector Emitter Breakdown Max

50V

Tepe Reflow Sıcaklığı (°C)

240

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Power Max

250mW

ECCN Kodu

EAR99

Polaritychannel Type

PNP

Collectoremitter Breakdown Voltage

50V

Maks. Çalışma Sıcaklığı

150°C

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Terminal Formu

GULL WING

JESD-609 Kodu

e0

Power Dissipation

250mW

Resistor Base R1

10k Ω

Kurşunsuz Kodu

no

Nem Hassasiyeti (MSL)

3 (168 Hours)

Qualification Status

COMMERCIAL