Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Pozisyonu
- BOTTOM
- Transistor Element Material
- SILICON
- Voltage Rated Dc
- 25V
- Ürün Durumu
- Obsolete
- Collector Base Voltage Vcbo
- 30V
- Hfemin
- 60
- Frekans
- 650MHz
- Montaj
- Through Hole
- Frequency Transition
- 650MHz
- Polaritychannel Type
- NPN
- Kurşunsuz Kodu
- no
- Transition Frequency
- 650MHz
- Voltage Collector Emitter Breakdown Max
- 25V
- Pin Sayısı
- 3
- Tedarikçi Cihaz Paketi
- TO-92-3
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 4mA 10V
- Weight
- 195mg
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 25V
- Collectorbase Capacitancemax
- 0.7pF
- Parça Durumu
- Obsolete
- Configuration
- SINGLE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Output Power
- 50mW
- Transistor Application
- AMPLIFIER
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Fabrika Tedarik Süresi
- 36 Weeks
- Jesd30 Code
- O-PBCY-T3
- Power Dissipation
- 350mW
- Max Power Dissipation
- 350mW
- Akım Değeri
- 50mA
- Currentcollector Ic Max
- 50mA
- Highest Frequency Band
- VERY HIGH FREQUENCY B
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Collector Emitter Voltage Vceo
- 25V
- RoHS Durumu
- Non-RoHS Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Qualification Status
- COMMERCIAL
- Yükseklik
- 6.35mm
- Genişlik
- 6.35mm
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