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Specifications
- Gain Bandwidth Product
- 2 GHz
- Power Max
- 200mW
- Voltage Rated Dc
- 12V
- Hfemin
- 25
- Additional Feature
- LOW NOISE
- Terminal Kaplaması
- TIN LEAD
- Pin Sayısı
- 3
- Pin Sayısı
- 3
- Voltage Collector Emitter Breakdown Max
- 12V
- Frekans
- 2GHz
- Continuous Collector Current
- 50mA
- Transistor Element Material
- SILICON
- Weight
- 201mg
- Highest Frequency Band
- ULTRA HIGH FREQUENCY B
- Montaj
- Through Hole
- Configuration
- SINGLE
- Transistor Type
- NPN
- Akım Değeri
- 50mA
- Tepe Reflow Süresi (maks. sn)
- 30
- Terminal Sayısı
- 3
- Collectoremitter Saturation Voltage
- 400mV
- Tepe Reflow Sıcaklığı (°C)
- 240
- Element Configuration
- Single
- JESD-609 Kodu
- e0
- Yüzey Montaj
- NO
- Max Breakdown Voltage
- 12V
- Yayın Yılı
- 2006
- Kurşunsuz Kodu
- yes
- Temel Parça No
- MPS5179
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Emitter Base Voltage Vebo
- 2.5V
- Transistor Application
- AMPLIFIER
- Kurşunsuz
- Lead Free
- Power Dissipation
- 350mW
- Parça Durumu
- Obsolete
- Currentcollector Ic Max
- 50mA
- Terminal Pozisyonu
- BOTTOM
- Lifecycle Status
- OBSOLETE (Last Updated: 1 day ago)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Bulk
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