MMBFJ112

Specifications

Power Dissipationmax Abs

0.35 W

Operating Temperaturemax

150 °C

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Fet Technology

JUNCTION

Power Dissipation

350mW

Yükseklik

4.55* mm

Element Configuration

Single

Voltage Cutoff Vgs Off Id

1V @ 1μA

Operating Ambient Temperature

-25 +70 °C

Drain To Source Resistance

50Ohm

Uzunluk

2.92mm

Yüzey Montaj

YES

Yayın Yılı

2000

Weight

30mg

Akım Değeri

5mA

Drain To Source Voltage Vdss

35V

Package Style

SMALL OUTLINE

Reach Svhc

No SVHC

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Part Life Cycle Code

Active

Terminal Kaplaması

MATTE TIN

Gate To Source Voltage Vgs

-35V

Terminal Formu

GULL WING

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Voltage Rated Dc

35V

Max Junction Temperature Tj

150°C

Çalışma Sıcaklığı

-55°C~150°C TJ

Package Description

SMALL OUTLINE, R-PDSO-G3

Depth

3.0 (housing) mm

Feedback Capmax Crss

5 pF

Exterior Housing Material

1

Transport Packaging Sizequantity

44*37*32.5/3000

Continuous Drain Current Id

5mA

Pin Sayısı

3

Material

contact - phosphor bronze with coating - Ni/housing - GF PBT (UL94V-0), black

Operating Mode

DEPLETION MODE

Nominal Current

1 A

Number Of Contacts

10 (2 x 5) with 1.27mm pitch