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C3 ChipZentronix
MBT3904DW2T1G

Rochester Electronics, LLC

MBT3904DW2T1G

Arrays BJT Transistors

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Specifications

Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Collector Emitter Voltage Vceo
300mV
Configuration
SEPARATE, 2 ELEMENTS
Yüzey Montaj
YES
Terminal Kaplaması
MATTE TIN
Dc Current Gain Hfe Min Ic Vce
100 @ 10mA 1V
Ambalaj
Tape & Reel (TR)
Kılıf / Paket
6-TSSOP, SC-88, SOT-363
Polarity
NPN
Hfemin
40
Akım Değeri
200mA
Power Max
150mW
Yayın Yılı
2009
Transition Frequency
300MHz
Vce Saturation Max Ib Ic
300mV @ 5mA, 50mA
Qualification Status
COMMERCIAL
Collectoremitter Saturation Voltage
300mV
Collector Base Voltage Vcbo
-55V
Transistor Application
AMPLIFIER
Gain Bandwidth Product
300MHz
ECCN Kodu
EAR99
Tepe Reflow Süresi (maks. sn)
40
Turn On Timemax Ton
70ns
Number Of Elements
2
Emitter Base Voltage Vebo
6V
Transistor Element Material
SILICON
Max Collector Current
200mA
Turn Off Timemax Toff
250ns
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collectoremitter Breakdown Voltage
40V
Tepe Reflow Sıcaklığı (°C)
260
Frequency Transition
300MHz
Transistor Type
2 NPN (Dual)
Terminal Formu
GULL WING
Temel Parça No
MBT3904D
Terminal Sayısı
6
Pin Sayısı
6
Currentcollector Ic Max
200mA
JESD-609 Kodu
e3
Max Power Dissipation
150mW

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