Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Frequency Transition
- 850MHz
- Hfemin
- 60
- Jesd30 Code
- R-PDSO-G3
- Transition Frequency
- 850MHz
- Emitter Base Voltage Vebo
- 4V
- Yayın Yılı
- 2002
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Akım Değeri
- 30mA
- Power Max
- 150mW
- Collectoremitter Breakdown Voltage
- 20V
- Yüzey Montaj
- YES
- Terminal Kaplaması
- MATTE TIN
- Ambalaj
- Tape & Reel (TR)
- Dc Current Gain Hfe Min Ic Vce
- 90 @ 5mA 10V
- Power Dissipation
- 150mW
- Qualification Status
- COMMERCIAL
- Çalışma Sıcaklığı
- 150°C TJ
- Terminal Sayısı
- 3
- Collector Base Voltage Vcbo
- 30V
- JESD-609 Kodu
- e3
- Montaj
- Surface Mount
- Kurşunsuz
- Lead Free
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Gain
- 15dB ~ 23dB
- Tedarikçi Cihaz Paketi
- SOT-23-3
- Ürün Durumu
- Obsolete
- Parça Durumu
- Obsolete
- Frekans
- 850MHz
- Voltage Collector Emitter Breakdown Max
- 20V
- Highest Frequency Band
- VERY HIGH FREQUENCY B
- Currentcollector Ic Max
- 30mA
- Max Power Dissipation
- 150mW
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Element Material
- SILICON
- Transistor Type
- NPN
- Voltage Rated Dc
- 20V
- Element Configuration
- Single
- Montaj Tipi
- Surface Mount
- RoHS Durumu
- ROHS3 Compliant
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