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KSC1674YTA

Rochester Electronics, LLC

KSC1674YTA

RF BJT Transistors

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Specifications

Kurşunsuz
Lead Free
Tepe Reflow Süresi (maks. sn)
NOT APPLICABLE
Çalışma Sıcaklığı
150°C TJ
Qualification Status
COMMERCIAL
Power Dissipation
250mW
Ambalaj
Tape & Box (TB)
Dc Current Gain Hfe Min Ic Vce
120 @ 1mA 6V
JESD-609 Kodu
e3
Montaj
Through Hole
Collector Base Voltage Vcbo
30V
Terminal Sayısı
3
Yüzey Montaj
NO
Collectoremitter Breakdown Voltage
20V
Akım Değeri
20mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Max
250mW
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Weight
240mg
Terminal Kaplaması
MATTE TIN
Hfemin
40
Frequency Transition
600MHz
Emitter Base Voltage Vebo
4V
Transition Frequency
600MHz
Jesd30 Code
O-PBCY-T3
Noise Figure Db Typ F
3dB ~ 5dB @ 100MHz
Configuration
SINGLE
Number Of Elements
1
Collector Emitter Voltage Vceo
20V
Pin Sayısı
3
Max Collector Current
20mA
Terminal Pozisyonu
BOTTOM
Transistor Application
AMPLIFIER
Continuous Collector Current
20mA
Gain Bandwidth Product
600MHz
Kurşunsuz Kodu
yes
Transistor Type
NPN
Tepe Reflow Sıcaklığı (°C)
NOT APPLICABLE
Transistor Element Material
SILICON
Temel Parça No
KSC1674
Polaritychannel Type
NPN

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