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Support
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Specifications
- Gateemitter Thr Voltagemax
- 6V
- Additional Feature
- LOW CONDUCTION LOSS
- Tepe Reflow Sıcaklığı (°C)
- 260
- Temel Parça No
- IRG4RC10SDPBF
- Number Of Elements
- 1
- Akım Değeri
- 14A
- Yayın Yılı
- 2004
- Voltage Collector Emitter Breakdown Max
- 600V
- Case Connection
- COLLECTOR
- Power Dissipation
- 38W
- Rise Time
- 31ns
- Collector Emitter Voltage Vceo
- 1.8V
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate Charge
- 15nC
- Tedarikçi Cihaz Paketi
- D-Pak
- Giriş Tipi
- Standard
- Test Conditions
- 480V, 8A, 100Ohm, 15V
- Switching Energy
- 310μJ (on), 3.28mJ (off)
- Vceon Max Vge Ic
- 1.8V @ 15V, 8A
- Genişlik
- 6.22mm
- Currentcollector Ic Max
- 14A
- Montaj Tipi
- Surface Mount
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Jesd30 Code
- R-PSSO-G2
- Terminal Kaplaması
- MATTE TIN OVER NICKEL
- Tepe Reflow Süresi (maks. sn)
- 30
- Collectoremitter Breakdown Voltage
- 600V
- Terminal
- SMD/SMT
- Terminal Sayısı
- 2
- Collectoremitter Saturation Voltage
- 1.7V
- Montaj
- Surface Mount
- Yükseklik
- 1.2446mm
- Polaritychannel Type
- N-CHANNEL
- Max Power Dissipation
- 38W
- Td Onoff25c
- 76ns/815ns
- Voltage Rated Dc
- 600V
- Current Collector Pulsed Icm
- 18A
- JESD-609 Kodu
- e3
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