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C3 ChipZentronix
IRG4RC10KDTRPBF

Rochester Electronics, LLC

IRG4RC10KDTRPBF

Single IGBTs

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Collectoremitter Breakdown Voltage
600V
Tepe Reflow Süresi (maks. sn)
30
Terminal Kaplaması
Matte Tin (Sn) - with Nickel (Ni) barrier
Transistor Element Material
SILICON
Pin Sayısı
3
Jesd30 Code
R-PSSO-G2
Montaj Tipi
Surface Mount
Currentcollector Ic Max
9A
Genişlik
6.223mm
Vceon Max Vge Ic
2.62V @ 15V, 5A
Switching Energy
250μJ (on), 140μJ (off)
Test Conditions
480V, 5A, 100Ohm, 15V
Giriş Tipi
Standard
Gate Charge
19nC
Tedarikçi Cihaz Paketi
D-Pak
Çalışma Sıcaklığı
-55°C~150°C TJ
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Collector Emitter Voltage Vceo
2.62V
Power Dissipation
38W
Rise Time
24ns
Case Connection
COLLECTOR
Voltage Collector Emitter Breakdown Max
600V
Yayın Yılı
2004
Number Of Elements
1
Temel Parça No
IRG4RC10KDPBF
Tepe Reflow Sıcaklığı (°C)
260
Additional Feature
ULTRA FAST SOFT RECOVERY
Gateemitter Thr Voltagemax
6.5V
Turn Off Timenom Toff
410 ns
Power Max
38W
RoHS Durumu
ROHS3 Compliant
Uzunluk
6.7056mm
Reach Svhc
No SVHC
Weight
350.003213mg
Max Collector Current
9A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Element Configuration
Single
Ambalaj
Tape & Reel (TR)
Max Breakdown Voltage
600V
Fall Timemax Tf
210ns

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