FQPF5P20

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Drainsource On Resistancemax

1.4 Ω

Kurşunsuz Kodu

Yes

Terminal Formu

THROUGH-HOLE

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

16.07mm

Package Body Material

PLASTIC/EPOXY

Moisture Sensitivity Levels

NOT APPLICABLE

Fet Type

P-Channel

Gate To Source Voltage Vgs

30V

Kılıf / Paket

TO-220-3 Full Pack

Terminal Kaplaması

MATTE TIN

Drain To Source Breakdown Voltage

-200V

Package Shape

RECTANGULAR

Turn On Delay Time

9 ns

Drive Voltage Max Rds On Min Rds On

10V

Configuration

SINGLE WITH BUILT-IN DIODE

Part Package Code

TO-220F

Montaj

Through Hole

Fabrika Tedarik Süresi

4 Weeks

Qualification Status

COMMERCIAL

Uzunluk

10.36mm

Akım Değeri

-3.4A

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Package Description

TO-220F, 3 PIN

Yayın Yılı

2017

Radyasyon Dayanımı

No

Number Of Terminals

3

Parça Durumu

Active

Fall Time Typ

25 ns

Seri

QFET®

Genişlik

4.9mm

Jesd30 Code

R-PSFM-T3

Pulsed Drain Currentmax Idm

13.6 A

Pin Sayısı

3

Rds On Max Id Vgs

1.4 Ω @ 1.7A, 10V