FQP50N06

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.022 Ω

Kurşunsuz

Lead Free

Terminal Formu

THROUGH-HOLE

Kurşunsuz Kodu

Yes

Gross Weight

0.36

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

9.4mm

Package Body Material

PLASTIC/EPOXY

Fet Type

N-Channel

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

25V

Kılıf / Paket

TO-220-3

Terminal Kaplaması

MATTE TIN

Drain To Source Breakdown Voltage

60V

Package Shape

RECTANGULAR

Montaj

Through Hole

Turn On Delay Time

15 ns

Drive Voltage Max Rds On Min Rds On

10V

Configuration

SINGLE WITH BUILT-IN DIODE

Part Package Code

TO-220AB

Qualification Status

COMMERCIAL

Uzunluk

10.1mm

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-220AB

Akım Değeri

50A

Number Of Terminals

3

Radyasyon Dayanımı

No

Yayın Yılı

2003

Package Description

TO-220, 3 PIN

Element Configuration

Single

Fall Time Typ

65 ns

Parça Durumu

Not For New Designs

Seri

QFET®

Jesd30 Code

R-PSFM-T3

Genişlik

4.7mm

Pulsed Drain Currentmax Idm

200 A

Pin Sayısı

3