Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 4mA 10V
- Currentcollector Ic Max
- 50mA
- REACH Uyumluluk Kodu
- unknown
- Kurşunsuz Kodu
- yes
- Power Max
- 350mW
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Min. Çalışma Sıcaklığı
- -55°C
- Emitter Base Voltage Vebo
- 3V
- Tepe Reflow Sıcaklığı (°C)
- NOT APPLICABLE
- Max Power Dissipation
- 350mW
- Parça Durumu
- Obsolete
- Polarity
- NPN
- Collectoremitter Breakdown Voltage
- 25V
- Power Dissipation
- 350mW
- Maks. Çalışma Sıcaklığı
- 150°C
- Jesd30 Code
- O-PBCY-T3
- Akım Değeri
- 50mA
- Configuration
- SINGLE
- JESD-609 Kodu
- e3
- Pin Sayısı
- 3
- Ambalaj
- Bulk
- Voltage Collector Emitter Breakdown Max
- 25V
- Tedarikçi Cihaz Paketi
- TO-92-3
- Yayın Yılı
- 2009
- Transistor Application
- AMPLIFIER
- Max Frequency
- 650MHz
- Collectorbase Capacitancemax
- 0.72pF
- Terminal Kaplaması
- MATTE TIN
- Terminal Sayısı
- 3
- Continuous Collector Current
- 50mA
- Highest Frequency Band
- ULTRA HIGH FREQUENCY B
- Additional Feature
- LOW NOISE
- Transition Frequency
- 650MHz
- Yüzey Montaj
- NO
- Tepe Reflow Süresi (maks. sn)
- NOT APPLICABLE
- Hfemin
- 60
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Frequency Transition
- 650MHz
- Transistor Element Material
- SILICON
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