Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Test Conditions
- 600V, 15A, 10 Ω, 15V
- Montaj
- Through Hole
- Power Max
- 186W
- Gateemitter Thr Voltagemax
- 8.5V
- Tepe Reflow Sıcaklığı (°C)
- NOT APPLICABLE
- Transistor Application
- POWER CONTROL
- Yayın Yılı
- 2006
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Ambalaj
- Tube
- Polaritychannel Type
- N-CHANNEL
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Collectoremitter Breakdown Voltage
- 1.2kV
- Voltage Rated Dc
- 1.2kV
- Igbt Type
- NPT and Trench
- Pin Sayısı
- 2
- Continuous Drain Current Id
- 15A
- Drain To Source Breakdown Voltage
- 1.2kV
- Kurşunsuz
- Lead Free
- Fall Timemax Tf
- 180ns
- Ürün Durumu
- Obsolete
- Collectoremitter Saturation Voltage
- 2.4V
- Vceon Max Vge Ic
- 2.4V @ 15V, 15A
- RoHS Durumu
- ROHS3 Compliant
- Reach Svhc
- No SVHC
- Reverse Recovery Time Trr
- 330 ns
- Akım Değeri
- 15A
- Power Dissipation
- 186W
- Kurşunsuz Kodu
- yes
- Number Of Elements
- 1
- Max Power Dissipation
- 186W
- Giriş Tipi
- Standard
- Yüzey Montaj
- NO
- Paket
- Tube
- Gate Charge
- 120nC
- Gateemitter Voltagemax
- 20V
- Max Collector Current
- 30A
- Qualification Status
- COMMERCIAL
- Tedarikçi Cihaz Paketi
- TO-3P
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