FDW2516NZ

Specifications

Current Continuous Drain Id25

5.8A

Ds Breakdown Voltagemin

20V

Terminal Sayısı

8

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

8

Tedarikçi Cihaz Paketi

8-TSSOP

Power Max

1.1W

Drain Currentmax Abs Id

5.8A

Fet Feature

Logic Level Gate

Fet Type

2 N-Channel (Dual)

Parça Durumu

Obsolete

Terminal Formu

GULL WING

Vgsth Max Id

1.5V @ 250μA

Tepe Reflow Sıcaklığı (°C)

260

JESD-609 Kodu

e3

Qualification Status

COMMERCIAL

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

20A

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Kurşunsuz Kodu

yes

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

PowerTrench®

Input Capacitance Ciss Max Vds

745pF @ 10V

REACH Uyumluluk Kodu

unknown

Rds On Max Id Vgs

30m Ω @ 5.8A, 4.5V

Kılıf / Paket

8-TSSOP (0.173, 4.40mm Width)

Gate Charge Qg Max Vgs

12nC @ 5V

Drainsource On Resistancemax

0.03Ohm

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number Of Elements

2

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

20V

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2006

Jesd30 Code

R-PDSO-G8