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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating Mode
- ENHANCEMENT MODE
- Paket
- Bulk
- Akım Değeri
- 6A
- Jesd30 Code
- R-PDSO-G8
- Ambalaj
- Tape & Reel (TR)
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 1286pF @ 10V
- Yükseklik
- 1mm
- Rds On Max Id Vgs
- 18m Ω @ 5.5A, 4.5V
- Kurşunsuz
- Lead Free
- Terminal Formu
- GULL WING
- Vgsth Max Id
- 1.5V @ 250μA
- Tepe Reflow Sıcaklığı (°C)
- 260
- Qualification Status
- COMMERCIAL
- Max Power Dissipation
- 600mW
- Yüzey Montaj
- YES
- Ürün Durumu
- Obsolete
- Ds Breakdown Voltagemin
- 20V
- Pin Sayısı
- 8
- Power Dissipation
- 1W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drain Currentmax Abs Id
- 5.5A
- Gate Charge Qg Max Vgs
- 17nC @ 4.5V
- Turn Off Delay Time
- 25 ns
- Drainsource On Resistancemax
- 0.018Ohm
- Number Of Elements
- 2
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Voltage Vdss
- 20V
- Montaj
- Surface Mount
- Terminal Kaplaması
- TIN
- Voltage Rated Dc
- 20V
- Yayın Yılı
- 2002
- Kurşunsuz Kodu
- yes
- Uzunluk
- 3mm
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Drain To Source Breakdown Voltage
- 20V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Jedec95 Code
- MO-153AA
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