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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn On Delay Time
- 7 ns
- Reach Svhc
- No SVHC
- Max Power Dissipation
- 900mW
- Montaj Tipi
- Surface Mount
- Gate Charge Qg Max Vgs
- 9nC @ 5V
- Terminal Sayısı
- 8
- Number Of Elements
- 2
- Element Configuration
- Dual
- Power Max
- 900mW
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Vgsth Max Id
- 3V @ 250μA
- Uzunluk
- 5mm
- Voltage Rated Dc
- -30V
- Rise Time
- 13ns
- Drainsource On Resistancemax
- 0.055Ohm
- Fet Feature
- Logic Level Gate
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Montaj
- Surface Mount
- Pin Sayısı
- 8
- Drain To Source Voltage Vdss
- 30V
- Kurşunsuz
- Lead Free
- Kurşunsuz Kodu
- yes
- Pin Sayısı
- 8
- Dual Supply Voltage
- -30V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Qualification Status
- COMMERCIAL
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Power Dissipation
- 2W
- Seri
- PowerTrench®
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Drain To Source Breakdown Voltage
- -30V
- Rds On Max Id Vgs
- 55m Ω @ 5A, 10V
- Ambalaj
- Tape & Reel (TR)
- Genişlik
- 4mm
- Operating Mode
- ENHANCEMENT MODE
- Terminal Formu
- GULL WING
- Pulsed Drain Currentmax Idm
- 20A
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2002
- Transistor Element Material
- SILICON
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