FDQ7238AS

Specifications

Gate Charge Qg Max Vgs

24nC @ 10V

Max Power Dissipation

1.1W

Montaj Tipi

Surface Mount

Terminal Sayısı

11

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Elements

2

Element Configuration

Dual

Power Max

1.3W 1.1W

Vgsth Max Id

3V @ 250μA

Fet Feature

Logic Level Gate

Rise Time

5ns

Drainsource On Resistancemax

0.0132Ohm

Pin Sayısı

14

Kılıf / Paket

14-SOIC (0.154, 3.90mm Width)

Montaj

Surface Mount

Drain To Source Voltage Vdss

30V

Kurşunsuz Kodu

yes

Qualification Status

COMMERCIAL

Pin Sayısı

14/11

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Seri

PowerTrench®

Power Dissipation

2.4W

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

13.2m Ω @ 11A, 10V

Ambalaj

Tape & Reel (TR)

Pulsed Drain Currentmax Idm

50A

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-G11

Terminal Kaplaması

MATTE TIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Continuous Drain Id25

14A 11A

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Fall Time Typ

5 ns

Gate To Source Voltage Vgs

20V