FDN336P

Specifications

Rds On Max Id Vgs

200m Ω @ 1.3A, 4.5V

Threshold Voltage

-900mV

ECCN Kodu

EAR99

Reach Svhc

No SVHC

Tepe Reflow Sıcaklığı (°C)

260

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.2 Ω

Yayın Yılı

2005

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

30

Package Body Material

PLASTIC/EPOXY

Ambalaj

Tape & Reel (TR)

Nominal Vgs

-900 mV

Continuous Drain Current Id

1.2A

Power Dissipation

500mW

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

-20V

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Contact Plating

Tin

Fet Type

P-Channel

Akım Değeri

-1.3A

Exterior Housing Material

1

Terminal Pozisyonu

DUAL

Gate To Source Voltage Vgs

8V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

20V

Transistor Application

SWITCHING

Terminal Kaplaması

MATTE TIN

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Fall Time Typ

12 ns

Qualification Status

COMMERCIAL

Dual Supply Voltage

-20V

REACH Uyumluluk Kodu

unknown

Fabrika Tedarik Süresi

10 Weeks

Jesd30 Code

R-PDSO-G3

Rise Time

12ns

Weight

30mg

Current Continuous Drain Id25

1.3A Ta

Turn On Delay Time

7 ns