FDM2509NZ

Specifications

Max Power Dissipation

2.2W

Kurşunsuz Kodu

yes

Tedarikçi Cihaz Paketi

6-MicroFET (2x5)

Drain To Source Voltage Vdss

20V

Gate Charge Qg Max Vgs

17nC @ 4.5V

Maks. Çalışma Sıcaklığı

150°C

Rise Time

15ns

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

20V

Drainsource On Resistancemax

0.018Ohm

Power Dissipation

2.2W

Input Capacitance Ciss Max Vds

1200pF @ 10V

Fet Type

2 N-Channel (Dual)

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Voltage Rated Dc

20V

Additional Feature

ESD PROTECTED

Ds Breakdown Voltagemin

20V

Turn Off Delay Time

27 ns

Vgsth Max Id

1.5V @ 250μA

REACH Uyumluluk Kodu

unknown

Kılıf / Paket

6-WFDFN Exposed Pad

Akım Değeri

8.7A

Pin Sayısı

6

Transistor Element Material

SILICON

Turn On Delay Time

11 ns

Pin Sayısı

6

Input Capacitance

1.2nF

Seri

PowerTrench®

Rds On Max

18 mΩ

Drain To Source Resistance

18mOhm

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PDSO-N6

Power Max

800mW

Yüzey Montaj

YES

Continuous Drain Current Id

8.7A

Gate To Source Voltage Vgs

12V

Drain Currentmax Abs Id

8.7A

Fet Feature

Logic Level Gate