Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 2.2W
- Kurşunsuz Kodu
- yes
- Tedarikçi Cihaz Paketi
- 6-MicroFET (2x5)
- Drain To Source Voltage Vdss
- 20V
- Gate Charge Qg Max Vgs
- 17nC @ 4.5V
- Maks. Çalışma Sıcaklığı
- 150°C
- Rise Time
- 15ns
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Breakdown Voltage
- 20V
- Drainsource On Resistancemax
- 0.018Ohm
- Power Dissipation
- 2.2W
- Input Capacitance Ciss Max Vds
- 1200pF @ 10V
- Fet Type
- 2 N-Channel (Dual)
- Montaj
- Surface Mount
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Voltage Rated Dc
- 20V
- Additional Feature
- ESD PROTECTED
- Ds Breakdown Voltagemin
- 20V
- Turn Off Delay Time
- 27 ns
- Vgsth Max Id
- 1.5V @ 250μA
- REACH Uyumluluk Kodu
- unknown
- Kılıf / Paket
- 6-WFDFN Exposed Pad
- Akım Değeri
- 8.7A
- Pin Sayısı
- 6
- Transistor Element Material
- SILICON
- Turn On Delay Time
- 11 ns
- Pin Sayısı
- 6
- Input Capacitance
- 1.2nF
- Seri
- PowerTrench®
- Rds On Max
- 18 mΩ
- Drain To Source Resistance
- 18mOhm
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Operating Mode
- ENHANCEMENT MODE
- Jesd30 Code
- R-PDSO-N6
- Power Max
- 800mW
- Yüzey Montaj
- YES
- Continuous Drain Current Id
- 8.7A
- Gate To Source Voltage Vgs
- 12V
- Drain Currentmax Abs Id
- 8.7A
- Fet Feature
- Logic Level Gate
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