FDG6332C

Specifications

Element Configuration

Dual

Number Of Elements

2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Contact Plating

Tin

Terminal Sayısı

6

Max Power Dissipation

300mW

Montaj Tipi

Surface Mount

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

1.5nC @ 4.5V

Fabrika Tedarik Süresi

10 Weeks

Number Of Terminals

6

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Drainsource On Resistancemax

0.3 Ω

Rise Time

14ns

Exterior Housing Material

2

Fet Feature

Logic Level Gate

Package Body Material

PLASTIC/EPOXY

Terminal Pozisyonu

DUAL

Vgsth Max Id

1.5V @ 250μA

Uzunluk

2mm

Tepe Reflow Sıcaklığı (°C)

260

Part Package Code

SC-70

Pin Sayısı

6

Qualification Status

COMMERCIAL

Kurşunsuz Kodu

Yes

Drain Currentmax Id

0.7 A

Kurşunsuz

Lead Free

Montaj

Surface Mount

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Pin Sayısı

6

Max Junction Temperature Tj

150°C

Rds On Max Id Vgs

300m Ω @ 700mA, 4.5V

Drain To Source Breakdown Voltage

20V

Rohs Code

Yes

Power Dissipation

300mW

Seri

PowerTrench®

Tepe Reflow Süresi (maks. sn)

30

Transistor Element Material

SILICON

Threshold Voltage

1.1V