FDC6561AN

Specifications

Power Dissipation

960mW

Operating Mode

ENHANCEMENT MODE

Additional Feature

LOGIC LEVEL COMPATIBLE

Package Body Material

PLASTIC/EPOXY

Akım Değeri

2.5A

Akım

24A

Rds On Max Id Vgs

95m Ω @ 2.5A, 10V

Reach Svhc

No SVHC

Fall Time Typ

10 ns

Number Of Elements

2

Genişlik

1.7mm

Gate Charge Qg Max Vgs

3.2nC @ 5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

2.5A

Polaritychannel Type

N-CHANNEL

Rise Time

10ns

Terminal Sayısı

6

Kurşunsuz Kodu

Yes

Package Shape

RECTANGULAR

Fet Type

2 N-Channel (Dual)

Radyasyon Dayanımı

No

Direnç

95mOhm

Turn Off Delay Time

12 ns

Part Life Cycle Code

Active

Transistor Element Material

SILICON

Yüzey Montaj

YES

Drainsource On Resistancemax

0.095 Ω

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Qualification Status

COMMERCIAL

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Fet Feature

Logic Level Gate

Ds Breakdown Voltagemin

30 V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Seri

PowerTrench®

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

MATTE TIN

Yükseklik

1mm

Jesd30 Code

R-PDSO-G6