FD6M043N08

Specifications

Gate Charge Qg Max Vgs

148nC @ 10V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-40°C~150°C TJ

Parça Durumu

Obsolete

Number Of Elements

2

Terminal Sayısı

15

Seri

Power-SPM™

Pin Sayısı

15

Fet Type

2 N-Channel (Dual)

Rds On Max Id Vgs

4.3m Ω @ 40A, 10V

Fet Feature

Standard

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Ürün Durumu

Active

Qualification Status

COMMERCIAL

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Drain To Source Voltage Vdss

75V

Yüzey Montaj

NO

Tedarikçi Cihaz Paketi

EPM15

Vgsth Max Id

4V @ 250μA

Drainsource On Resistancemax

0.0043Ohm

Avalanche Energy Rating Eas

681 mJ

REACH Uyumluluk Kodu

unknown

Transistor Application

SWITCHING

Terminal Pozisyonu

ZIG-ZAG

Current Continuous Drain Id25

65A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Through Hole

Kılıf / Paket

EPM15

Paket

Bulk

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

75V

Input Capacitance Ciss Max Vds

6180pF @ 25V

Jesd30 Code

R-PZIP-T15

Drain Currentmax Abs Id

65A

Case Connection

ISOLATED