BLF7G27L-100,112

Specifications

Typical Drain Efficiency

28

Transistor Type

LDMOS

Maximum Drain Source Resistance Mohm

100@6.05V

Drain To Source Voltage Vdss

65 V

Test Voltage

28 V

Maximum Vswr

10

Maximum Gate Source Voltage V

13

Paket

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pcb Changed

3

Frekans

2.5GHz~2.7GHz

Number Of Elements Per Chip

1

Montaj

Screw

Gain

18dB

Eccn Us

EAR99

Max Frequency

2.7 GHz

Minimum Frequency Mhz

2500

Nominal Gerilim

65V

Output Power W

20(Typ)

Pin Sayısı

3

Yayın Yılı

2010

Mode Of Operation

1-Carrier W-CDMA|IS-95

RoHS Durumu

ROHS3 Compliant

Maximum Continuous Drain Current A

28

Current Rating Amps

28A

Min. Çalışma Sıcaklığı

-65 °C

Element Configuration

Single

Typical Power Gain Db

18

Mounting

Screw

Process Technology

LDMOS

Power Output

20W

Gate To Source Voltage Vgs

13 V

Channel Mode

Enhancement

RoHS

Compliant

Voltage Rating

65 V

Configuration

Single

Maximum Operating Temperature C

200

Ambalaj

Tube

Drain To Source Breakdown Voltage

65 V

Maximum Drain Source Voltage V

65