BLF6G10LS-135R,112

Specifications

Typical Power Gain Db

21

Hts

8541.29.00.75

Current Rating Amps

32A

Maximum Continuous Drain Current A

32

Mode Of Operation

2-Carrier W-CDMA

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2010

Nominal Gerilim

65V

Output Power W

26.5(Typ)

Minimum Frequency Mhz

869

Eccn Us

EAR99

Number Of Elements Per Chip

1

Gain

21dB

Pcb Changed

3

Frekans

871.5MHz~891.5MHz

Nem Hassasiyeti (MSL)

3 (168 Hours)

Paket

Tray

Maximum Vswr

10

Maximum Gate Source Voltage V

13

Maximum Drain Source Resistance Mohm

100(Typ)@6.15V

Transistor Type

LDMOS

Typical Drain Efficiency

28

Ürün Durumu

Obsolete

Typical Forward Transconductance S

13

Military

No

Typical Reverse Transfer Capacitance Vds Pf

2@28V

Pin Sayısı

3

Channel Type

N

Package Length

20.7(Max)

Parça Durumu

Obsolete

Kılıf / Paket

SOT-502B

Tedarikçi Cihaz Paketi

SOT502B

Package Width

9.91(Max)

Temel Parça No

BLF6G10

Supplier Package

SOT-502B

Package Height

4.72(Max)

Current Test

950mA

Minimum Operating Temperature C

-65

Maximum Frequency Mhz

894

Voltage Test

28V