Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Collector Emitter Breakdown Max
- 40V
- Dc Current Gain Hfe Min Ic Vce
- 65 @ 1mA 10V
- Emitter Base Voltage Vebo
- 4V
- Pin Sayısı
- 3
- Max Power Dissipation
- 350mW
- Min. Çalışma Sıcaklığı
- -65°C
- Number Of Elements
- 1
- Gain Bandwidth Product
- 1.1 GHz
- Transistor Element Material
- SILICON
- Tedarikçi Cihaz Paketi
- TO-92-3
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Collectoremitter Breakdown Voltage
- 40V
- Montaj Tipi
- Through Hole
- Terminal Sayısı
- 3
- Polarity
- NPN
- Terminal Pozisyonu
- BOTTOM
- Continuous Collector Current
- 50mA
- Configuration
- SINGLE
- Parça Durumu
- Obsolete
- Qualification Status
- COMMERCIAL
- Maks. Çalışma Sıcaklığı
- 150°C
- Temel Parça No
- BF240
- Frequency Transition
- 1.1GHz
- Collector Emitter Voltage Vceo
- 40V
- Transistor Type
- NPN
- Max Frequency
- 150MHz
- Power Max
- 350mW
- Ambalaj
- Bulk
- Hfemin
- 65
- Power Dissipation
- 350mW
- Akım Değeri
- 50mA
- Collector Base Voltage Vcbo
- 40V
- Frekans
- 150MHz
- Kurşunsuz
- Lead Free
- Yüzey Montaj
- NO
- Element Configuration
- Single
- Jesd30 Code
- O-PBCY-T3
- Terminal Kaplaması
- MATTE TIN
- RoHS Durumu
- Non-RoHS Compliant
- JESD-609 Kodu
- e3
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