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Specifications
- Power Max
- 500mW
- Current Collector Cutoff Max
- 15nA ICBO
- Transistor Application
- AMPLIFIER
- Gain Bandwidth Product
- 100MHz
- Temel Parça No
- BC847CD
- Transistor Element Material
- SILICON
- Collectoremitter Saturation Voltage
- 600mV
- Collectoremitter Breakdown Voltage
- 30V
- Frequency Transition
- 100MHz
- Collector Base Voltage Vcbo
- 30V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz
- Lead Free
- Qualification Status
- COMMERCIAL
- Transistor Type
- 2 NPN (Dual)
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Number Of Elements
- 2
- Parça Durumu
- Obsolete
- JESD-609 Kodu
- e3
- Kılıf / Paket
- SOT-563, SOT-666
- Yayın Yılı
- 2009
- Voltage Rated Dc
- 30V
- Akım Değeri
- 100mA
- Yüzey Montaj
- YES
- Kurşunsuz Kodu
- yes
- Max Collector Current
- 100mA
- Jesd30 Code
- R-PDSO-F6
- Vce Saturation Max Ib Ic
- 600mV @ 5mA, 100mA
- Terminal Formu
- FLAT
- Voltage Collector Emitter Breakdown Max
- 30V
- ECCN Kodu
- EAR99
- Max Power Dissipation
- 500mW
- Emitter Base Voltage Vebo
- 5V
- Polarity
- NPN
- Configuration
- SEPARATE, 2 ELEMENTS
- Currentcollector Ic Max
- 100mA
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Dc Current Gain Hfe Min Ic Vce
- 420 @ 2mA 5V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Montaj
- Surface Mount
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