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2N3663

Rochester Electronics, LLC

2N3663

RF BJT Transistors

RoHS: Compliant

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Specifications

Ambalaj
Bulk
Number Of Elements
1
Frekans
2.1GHz
Voltage Rated Dc
12V
REACH Uyumluluk Kodu
unknown
Maks. Çalışma Sıcaklığı
150°C
Power Max
350mW
Max Collector Current
50mA
Power Dissipation
350mW
Noise Figure Db Typ F
6.5dB @ 60MHz
Dc Current Gain Hfe Min Ic Vce
20 @ 8mA 10V
Terminal Pozisyonu
BOTTOM
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Polarity
NPN
Configuration
SINGLE
HTS Kodu
8541.21.00.75
Frequency Transition
2.1GHz
Highest Frequency Band
VERY HIGH FREQUENCY B
Temel Parça No
2N3663
Montaj
Through Hole
Akım Değeri
50mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Element Material
SILICON
Max Frequency
2.1GHz
JESD-609 Kodu
e3
Tedarikçi Cihaz Paketi
TO-92-3
Paket
Bulk
RoHS Durumu
ROHS3 Compliant
Tepe Reflow Sıcaklığı (°C)
NOT APPLICABLE
Jesd30 Code
O-PBCY-T3
Element Configuration
Single
Emitter Base Voltage Vebo
3V
Transistor Type
NPN
Kurşunsuz
Lead Free
Continuous Collector Current
50mA
Transistor Application
AMPLIFIER
Montaj Tipi
Through Hole
Terminal Sayısı
3
Collector Emitter Voltage Vceo
12V
Transition Frequency
700MHz

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