RJK03F0DPA-00-J53

Specifications

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

120 A

Pin Sayısı

8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drainsource On Resistancemax

0.0078 Ω

Terminal Pozisyonu

DUAL

Operating Temperaturemax

150 °C

Package Style

SMALL OUTLINE

Operating Mode

ENHANCEMENT MODE

Polaritychannel Type

N-CHANNEL

Terminal Formu

NO LEAD

Package Body Material

PLASTIC/EPOXY

Power Dissipationmax Abs

30 W

Package Description

SMALL OUTLINE, R-PDSO-N5

Number Of Terminals

5

Ds Breakdown Voltagemin

30 V

Part Life Cycle Code

Obsolete

Rohs Code

Yes

Yüzey Montaj

YES

JESD-609 Kodu

e4

Jesd30 Code

R-PDSO-N5

Number Of Elements

1

REACH Uyumluluk Kodu

compliant

Drain Currentmax Id

30 A

ECCN Kodu

EAR99

Package Shape

RECTANGULAR

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Transistor Application

SWITCHING

Qualification Status

Not Qualified