Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Forward Voltagemax
- 2.7 V
- Shape
- ROUND
- Size
- 1.6 mm
- Operating Temperaturemin
- -10 °C
- Semiconductor Material
- AlGaInP
- Configuration
- SINGLE WITH BUILT-IN PHOTO DIODE
- Yüzey Montaj
- NO
- Output Powernom
- 10 mW
- Ihs Manufacturer
- RENESAS ELECTRONICS CORP
- Forward Currentmax
- 0.045 A
- Fonksiyon Sayısı
- 1
- Mounting Feature
- THROUGH HOLE MOUNT
- Peak Wavelength
- 635 nm
- Part Life Cycle Code
- Transferred
- Operating Temperaturemax
- 50 °C
- REACH Uyumluluk Kodu
- compliant
- Optoelectronic Device Type
- LASER DIODE
- Threshold Currentmax
- 30 mA
- Package Description
- LD/MG, 3 PIN
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