2SK2353

Specifications

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

450 V

Number Of Terminals

3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Additional Feature

HIGH VOLTAGE, AVALANCHE RATING

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Polaritychannel Type

N-CHANNEL

Qualification Status

Not Qualified

Package Shape

RECTANGULAR

Part Package Code

SFM

Drain Currentmax Id

4.5 A

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Operating Temperaturemax

150 °C

Yüzey Montaj

NO

Pulsed Drain Currentmax Idm

18 A

Package Body Material

PLASTIC/EPOXY

Case Connection

ISOLATED

Package Style

FLANGE MOUNT

Drainsource On Resistancemax

1.4 Ω

ECCN Kodu

EAR99

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Terminal Formu

THROUGH-HOLE

Pin Sayısı

3

REACH Uyumluluk Kodu

unknown

Avalanche Energy Rating Eas

17.4 mJ

Power Dissipationmax Abs

30 W

Transistor Application

SWITCHING

Package Description

FLANGE MOUNT, R-PSFM-T3

Jesd30 Code

R-PSFM-T3

Part Life Cycle Code

Obsolete