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Renesas Electronics Corporation

2SC5773JR-TL-E

RF BJT Transistors

RoHS: Compliant

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Specifications

Frequency Transition
10.8GHz
Çalışma Sıcaklığı
150°C (TJ)
Power Max
700mW
Noise Figure Db Typ F
1.1dB @ 900MHz
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Parça Durumu
Active
Currentcollector Ic Max
80mA
Montaj Tipi
Surface Mount
Ambalaj
Bulk
Voltage Collector Emitter Breakdown Max
6V
Dc Current Gain Hfe Min Ic Vce
80 @ 50mA, 5V
Gain
11.9dB
Transistor Type
NPN
Tedarikçi Cihaz Paketi
3-MPAK

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