Volume pricing
- 1+ pcs$1.94
- 10+ pcs$1.83
- 100+ pcs$1.73
- 500+ pcs$1.63
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Number Of Terminals
- 3
- Ds Breakdown Voltagemin
- 60 V
- Transistor Element Material
- SILICON
- Package Shape
- RECTANGULAR
- Üretici Parça No
- 2SK1949L-E
- JESD-609 Kodu
- e6
- Qualification Status
- Not Qualified
- Polaritychannel Type
- N-CHANNEL
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Additional Feature
- AVALANCHE RATED
- Operating Mode
- ENHANCEMENT MODE
- Risk Rank
- 5.12
- Drain Currentmax Id
- 5 A
- Package Body Material
- PLASTIC/EPOXY
- Case Connection
- DRAIN
- Pulsed Drain Currentmax Idm
- 20 A
- Yüzey Montaj
- NO
- Number Of Elements
- 1
- Terminal Pozisyonu
- SINGLE
- Seri
- *
- ECCN Kodu
- EAR99
- Ihs Manufacturer
- RENESAS ELECTRONICS CORP
- Drainsource On Resistancemax
- 0.2 Ω
- Rohs Code
- Yes
- Moisture Sensitivity Levels
- 1
- Package Style
- IN-LINE
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Pin Sayısı
- 3
- Terminal Formu
- THROUGH-HOLE
- Package Description
- DPAK-3
- Transistor Application
- SWITCHING
- Ürün Durumu
- Active
- REACH Uyumluluk Kodu
- compliant
- Terminal Kaplaması
- Tin/Bismuth (Sn/Bi)
- Paket
- Bulk
- Reflow Temperaturemax S
- NOT SPECIFIED
- Part Life Cycle Code
- Not Recommended
- Jesd30 Code
- R-PSIP-T3
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