Volume pricing
- 1+ pcs$6.18
- 10+ pcs$5.83
- 100+ pcs$5.50
- 500+ pcs$5.19
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gateemitter Thr Voltagemax
- 8V
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Td Onoff25c
- 53ns/185ns
- Max Power Dissipation
- 320W
- Number Of Elements
- 1
- Polaritychannel Type
- N-CHANNEL
- Montaj
- Through Hole
- Voltage Collector Emitter Breakdown Max
- 1200V
- Turn On Time
- 98 ns
- ECCN Kodu
- EAR99
- Kılıf / Paket
- TO-247-3
- Collector Emitter Voltage Vceo
- 1.2kV
- Parça Durumu
- Obsolete
- Radyasyon Dayanımı
- No
- Case Connection
- COLLECTOR
- Fabrika Tedarik Süresi
- 16 Weeks
- Vceon Max Vge Ic
- 2.3V @ 15V, 35A
- Switching Energy
- 3.2mJ (on), 2.5mJ (off)
- Gate Charge
- 166nC
- Çalışma Sıcaklığı
- 150°C TJ
- Transistor Application
- POWER CONTROL
- Giriş Tipi
- Standard
- Test Conditions
- 600V, 35A, 5 Ω, 15V
- Reverse Recovery Time
- 200 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Max Collector Current
- 70A
- Igbt Type
- Trench
- Ambalaj
- Tube
- Element Configuration
- Single
- Montaj Tipi
- Through Hole
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Turn Off Timenom Toff
- 465 ns
- Collectoremitter Breakdown Voltage
- 1.2kV
- Power Max
- 320W
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