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R1LP0108ESN-5SI#B0

Renesas Electronics America

R1LP0108ESN-5SI#B0

Memory

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Specifications

Ambalaj
Tube
Terminal Pozisyonu
DUAL
Pin Sayısı
32
Memory Density
1048576 bit
Çalışma Sıcaklığı
-40°C~85°C TA
Fonksiyon Sayısı
1
Organization
128KX8
Standby Currentmax
0.000002A
Qualification Status
Not Qualified
Io Type
COMMON
JESD-609 Kodu
e3
Write Cycle Time Word Page
55ns
Uzunluk
20.75mm
Terminal Sayısı
32
Kurşunsuz Kodu
yes
Power Supplies
5V
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Genişlik
11.4mm
Terminal Adımı
1.27mm
Memory Types
Volatile
Operating Mode
ASYNCHRONOUS
Access Time Max
55 ns
Supply Currentmax
0.035mA
Output Characteristics
3-STATE
Memory Size
1Mb 128K x 8
Maks. Oturma Yüksekliği
3.05mm
Standby Voltagemin
2V
Jesd30 Code
R-PDSO-G32
Besleme Gerilimi
5V
Parça Durumu
Obsolete
Memory Interface
Parallel
Memory Format
SRAM
Fabrika Tedarik Süresi
20 Weeks
Supply Voltagemin Vsup
4.5V
Yayın Yılı
2013
Yüzey Montaj
YES
Memory Width
8
Supply Voltagemax Vsup
5.5V
Nem Hassasiyeti (MSL)
3 (168 Hours)
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED

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