Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance Ciss Max Vds
- 1400pF @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rise Time
- 17ns
- Drainsource On Resistancemax
- 0.025Ohm
- Pin Sayısı
- 8
- Ds Breakdown Voltagemin
- 30V
- Transistor Element Material
- SILICON
- Fall Time Typ
- 9 ns
- Continuous Drain Current Id
- 11A
- Number Of Elements
- 2
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- ROHS3 Compliant
- Tepe Reflow Süresi (maks. sn)
- 20
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Drain To Source Voltage Vdss
- 30V
- Montaj
- Surface Mount
- Vgsth Max Id
- 2.5V @ 1mA
- Turn On Delay Time
- 15 ns
- Yayın Yılı
- 2005
- Çalışma Sıcaklığı
- 150°C TJ
- Fet Feature
- Logic Level Gate
- Parça Durumu
- Active
- Montaj Tipi
- Surface Mount
- Kurşunsuz
- Lead Free
- Power Max
- 3W
- Rds On Max Id Vgs
- 16m Ω @ 5.5A, 10V
- Max Power Dissipation
- 2W
- Ambalaj
- Tape & Reel (TR)
- Turn Off Delay Time
- 50 ns
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Sayısı
- 8
- Fabrika Tedarik Süresi
- 16 Weeks
- Terminal Formu
- GULL WING
- Fet Type
- 2 N-Channel (Dual)
- Gate Charge Qg Max Vgs
- 22nC @ 10V
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 8
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