Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 2
- Fall Time Typ
- 80 ns
- Continuous Drain Current Id
- 5A
- Transistor Element Material
- SILICON
- Pin Sayısı
- 8
- Rise Time
- 40ns
- Voltage Rated Dc
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 520pF @ 10V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Currentmax Idm
- 40A
- Fet Feature
- Logic Level Gate
- Çalışma Sıcaklığı
- 150°C TJ
- Drain Currentmax Abs Id
- 5A
- Yayın Yılı
- 2005
- Vgsth Max Id
- 2.2V @ 1mA
- Turn On Delay Time
- 11 ns
- Montaj
- Surface Mount
- Power Dissipation
- 3W
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 20
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Turn Off Delay Time
- 110 ns
- Max Power Dissipation
- 2W
- Ambalaj
- Tape & Reel (TR)
- Rds On Max Id Vgs
- 58m Ω @ 3A, 10V
- Akım Değeri
- 5A
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- 260
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 8
- Gate To Source Voltage Vgs
- 20V
- Fet Type
- 2 N-Channel (Dual)
- Terminal Formu
- GULL WING
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