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NE97833-T1B-A

RF BJT Transistors

In StockRoHS: Compliant

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Specifications

Voltage Collector Emitter Breakdown Max
12V
Dc Current Gain Hfe Min Ic Vce
20 @ 15mA, 10V
Power Max
200mW
Element Configuration
Single
Transistor Type
PNP
Collector Emitter Voltage Vceo
12V
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Tedarikçi Cihaz Paketi
SOT23-3 (TO-236)
Max Collector Current
50mA
Continuous Collector Current
-50mA
Montaj Tipi
Surface Mount
Pin Sayısı
3
Number Of Elements
1
Noise Figure Db Typ F
2dB @ 1GHz
Montaj
Surface Mount
Çalışma Sıcaklığı
150°C (TJ)
Power Dissipation
200mW
Ambalaj
Tape & Reel (TR)
Paket
Tape & Reel (TR)
Max Power Dissipation
200mW
Gain
10dB
Frequency Transition
5.5GHz
Parça Durumu
Obsolete
Frekans
5.5GHz
RoHS Durumu
RoHS Compliant
Kurşunsuz
Lead Free
Collector Base Voltage Vcbo
20V
Ürün Durumu
Obsolete
Collectoremitter Breakdown Voltage
12V
Emitter Base Voltage Vebo
3V
Radyasyon Dayanımı
No
Nem Hassasiyeti (MSL)
1 (Unlimited)
Currentcollector Ic Max
50mA

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