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NE68033-T1B-A

RF BJT Transistors

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Specifications

Çalışma Sıcaklığı
150°C (TJ)
Max Power Dissipation
200 mW
Gain
8dB
Polarity
NPN
Number Of Elements
1
Noise Figure Db Typ F
1.8dB @ 2GHz
Uzunluk
2.9 mm
Emitter Base Voltage Vebo
1.5 V
Currentcollector Ic Max
35mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Frekans
2 GHz
Collector Base Voltage Vcbo
20 V
Dc Current Gain Hfe Min Ic Vce
50 @ 10mA, 6V
Boyut / Ölçü
0.351 Dia x 0.786 L (8.92mm x 19.96mm)
Output Power
200mW
Transistor Type
NPN
Weight
1.437803 g
Max Breakdown Voltage
10 V
Nominal Gerilim
20V
Akım Değeri
35 mA
Collector Emitter Voltage Vceo
10 V
Continuous Collector Current
35 mA
Tolerans
±20%
Genişlik
1.5 mm
Power Dissipation
200 mW
Paket
Tape & Reel (TR)
Ambalaj
Bulk
Seri
Military, MIL-PRF-39003/1, CSR13
Montaj Tipi
Surface Mount
RoHS
Compliant
Kapasitans
100µF
Gain Bandwidth Product
10 GHz
Pin Sayısı
3
Montaj
Surface Mount
Temel Parça No
NE68033
Radyasyon Dayanımı
No
Manufacturer Size Code
D
Tip
Hermetically Sealed
Voltage Rating Dc
10 V
Frequency Transition
10GHz

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