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NE68030-T1-A

RF BJT Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Transistor Type
NPN
Output Power
150mW
Element Configuration
Single
Power Max
150mW
Dc Current Gain Hfe Min Ic Vce
50 @ 5mA, 3V
Max Breakdown Voltage
10V
Voltage Collector Emitter Breakdown Max
10V
Continuous Collector Current
35mA
Max Collector Current
35mA
Tedarikçi Cihaz Paketi
SOT-323
Kılıf / Paket
SC-70, SOT-323
Collector Emitter Voltage Vceo
10V
Seri
*
Gain
7.5dB
Max Power Dissipation
150mW
Ambalaj
Tape & Reel (TR)
Paket
Retail Package
Power Dissipation
150mW
Çalışma Sıcaklığı
150°C (TJ)
Montaj
Surface Mount
Temel Parça No
NE68030
Noise Figure Db Typ F
1.9dB @ 2GHz
Number Of Elements
1
Pin Sayısı
3
Montaj Tipi
Surface Mount
Currentcollector Ic Max
35mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Radyasyon Dayanımı
No
Emitter Base Voltage Vebo
1.5V
Collectoremitter Breakdown Voltage
10V
Ürün Durumu
Active
Collector Base Voltage Vcbo
20V
RoHS Durumu
RoHS Compliant
Kurşunsuz
Lead Free
Parça Durumu
Obsolete
Frekans
10GHz
Frequency Transition
8GHz

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