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NE662M04-T2-A

RF BJT Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Genişlik
1.25mm
Continuous Collector Current
35mA
Max Collector Current
35mA
Tedarikçi Cihaz Paketi
M04
Kılıf / Paket
SOT-343F
Collector Emitter Voltage Vceo
3.3V
Yükseklik
590μm
Voltage Collector Emitter Breakdown Max
3.3V
Max Breakdown Voltage
3.3V
Output Power
115mW
Power Max
115mW
Transistor Type
NPN
Dc Current Gain Hfe Min Ic Vce
50 @ 5mA, 2V
Ürün Durumu
Last Time Buy
Collectoremitter Breakdown Voltage
3.3V
Collector Base Voltage Vcbo
15V
Frequency Transition
25GHz
RoHS Durumu
RoHS Compliant
Kurşunsuz
Lead Free
Parça Durumu
Obsolete
Frekans
2GHz
Currentcollector Ic Max
35mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Radyasyon Dayanımı
No
Uzunluk
2mm
Emitter Base Voltage Vebo
1.5V
Noise Figure Db Typ F
1.1dB @ 2GHz
Montaj
Surface Mount
Temel Parça No
NE662
Montaj Tipi
Surface Mount
Number Of Elements
1
Gain Bandwidth Product
25 GHz
Pin Sayısı
4
Max Power Dissipation
115mW
Gain
17dB
Power Dissipation
115mW
Çalışma Sıcaklığı
150°C (TJ)
Ambalaj
Tape & Reel (TR)
Paket
Tape & Reel (TR)

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