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Specifications
- Kılıf / Paket
- NI-400
- Minimum Operating Temperature
- - 40 C
- Vds Drainsource Breakdown Voltage
- 65 V
- Montaj Stili
- Flange Mount
- Technology
- GaN-on-SiC
- Maks. Çalışma Sıcaklığı
- + 85 C
- Transistor Polarity
- P-Channel
- Output Power
- 56.3 dBm
- Id Continuous Drain Current
- 19 A
- Operating Frequency
- 2 GHz
- Gain
- 20.6 dB
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