Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Voltage Vdss
- 1200V 1.2kV
- Gate Charge Qg Max Vgs
- 500nC @ 20V
- Jesd30 Code
- R-PUFM-X20
- Continuous Drain Current Id
- 100A
- Input Capacitance Ciss Max Vds
- 10200pF @ 800V
- RoHS Durumu
- RoHS Compliant
- Terminal Pozisyonu
- UPPER
- Drainsource On Resistancemax
- 0.025Ohm
- Operating Mode
- ENHANCEMENT MODE
- Max Power Dissipation
- 900W
- Ds Breakdown Voltagemin
- 1200V
- Vgsth Max Id
- 5V @ 10mA
- Terminal Formu
- UNSPECIFIED
- Fet Feature
- Silicon Carbide (SiC)
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Kılıf / Paket
- Module
- REACH Uyumluluk Kodu
- unknown
- Fet Type
- 2 N-Channel (Dual)
- Montaj
- Chassis Mount
- Çalışma Sıcaklığı
- -40°C~175°C TJ
- Case Connection
- ISOLATED
- Number Of Elements
- 2
- Parça Durumu
- Active
- Terminal Sayısı
- 20
- ECCN Kodu
- EAR99
- Current Continuous Drain Id25
- 100A Tc
- Ambalaj
- Bulk
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pulsed Drain Currentmax Idm
- 250A
- Rds On Max Id Vgs
- 25m Ω @ 100A, 20V
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2014
- Montaj Tipi
- Chassis Mount
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