Volume pricing
- 1+ pcs$556.93
- 10+ pcs$525.40
- 100+ pcs$495.66
- 500+ pcs$467.61
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Polarity
- NPN
- Collector Emitter Voltage Vceo
- 3.9V
- Collectoremitter Breakdown Voltage
- 4.5kV
- Element Configuration
- Dual
- Case Connection
- ISOLATED
- Max Power Dissipation
- 1.44kW
- Voltage Collector Emitter Breakdown Max
- 4500V
- Configuration
- Half Bridge
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Power Max
- 1440W
- Vceon Max Vge Ic
- 3.9V @ 15V, 150A
- Transistor Application
- POWER CONTROL
- Input Capacitance
- 18nF
- Montaj
- Screw
- Kurşunsuz Kodu
- yes
- Pin Sayısı
- 8
- Input Capacitance Cies Vce
- 18nF @ 10V
- Pin Sayısı
- 8
- Current Collector Cutoff Max
- 2.7mA
- Input
- Standard
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Terminal Sayısı
- 8
- Kılıf / Paket
- Module
- RoHS Durumu
- RoHS Compliant
- Terminal Formu
- UNSPECIFIED
- Max Collector Current
- 150A
- Terminal Pozisyonu
- UPPER
- Number Of Elements
- 2
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Reach Svhc
- Unknown
- Ntc Thermistor
- No
- Seri
- IGBTMOD™
- Yayın Yılı
- 2011
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