Volume pricing
- 1+ pcs$718.89
- 10+ pcs$678.20
- 100+ pcs$639.81
- 500+ pcs$603.60
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collectoremitter Breakdown Voltage
- 1.2kV
- Yüzey Montaj
- NO
- Kılıf / Paket
- Module
- Max Power Dissipation
- 5.9kW
- Transistor Application
- POWER CONTROL
- Terminal Sayısı
- 9
- Transistor Element Material
- SILICON
- Voltage Collector Emitter Breakdown Max
- 1200V
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Terminal Pozisyonu
- UPPER
- Polaritychannel Type
- N-CHANNEL
- Power Max
- 5900W
- Current Collector Cutoff Max
- 1mA
- RoHS
- Details
- Input
- Standard
- Max Collector Current
- 900A
- Parça Durumu
- Active
- Number Of Elements
- 2
- Pin Sayısı
- 9
- Jesd30 Code
- R-XUFM-X9
- Ntc Thermistor
- No
- Vceon Max Vge Ic
- 2.5V @ 15V, 900A
- Input Capacitance
- 140nF
- Collector Emitter Voltage Vceo
- 2.5V
- Yayın Yılı
- 2010
- RoHS Durumu
- RoHS Compliant
- Kurşunsuz Kodu
- yes
- Case Connection
- ISOLATED
- Ürün Tipi
- Mixed Contact D-Sub Connectors
- Terminal Formu
- UNSPECIFIED
- Fabrika Paket Adedi
- 10
- Input Capacitance Cies Vce
- 140nF @ 10V
- Configuration
- Half Bridge
- Seri
- IGBTMOD™
- Pin Sayısı
- 21
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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