Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Configuration
- Half Bridge
- Collector Emitter Voltage Vceo
- 3.15V
- Parça Durumu
- Obsolete
- Current Collector Cutoff Max
- 2mA
- Power Max
- 1500W
- Yayın Yılı
- 2012
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Max Collector Current
- 800A
- Input Capacitance Cies Vce
- 70.4nF @ 10V
- RoHS Durumu
- RoHS Compliant
- Gateemitter Voltagemax
- 20V
- Input
- Standard
- Input Capacitance
- 70.4nF
- Number Of Elements
- 2
- Collectoremitter Breakdown Voltage
- 600V
- Case Connection
- ISOLATED
- Seri
- IGBTMOD™
- Vceon Max Vge Ic
- 3.15V @ 15V, 800A
- Transistor Application
- POWER CONTROL
- Montaj
- Chassis Mount
- Polaritychannel Type
- N-CHANNEL
- Jesd30 Code
- R-XUFM-X7
- Terminal Formu
- UNSPECIFIED
- Montaj Tipi
- Chassis Mount
- Ntc Thermistor
- No
- Kılıf / Paket
- Module
- Terminal Sayısı
- 7
- Vcesatmax
- 3 V
- Terminal Pozisyonu
- UPPER
- Pin Sayısı
- 7
- Max Power Dissipation
- 1.5kW
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