Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Collector Emitter Breakdown Max
- 1200V
- Collector Emitter Voltage Vceo
- 3.7V
- Turn On Time
- 100 ns
- Configuration
- Half Bridge
- Transistor Element Material
- SILICON
- Power Max
- 600W
- Current Collector Cutoff Max
- 1mA
- Parça Durumu
- Obsolete
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Itar Registered
- Unavailable
- Yayın Yılı
- 2003
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- RoHS Compliant
- Input Capacitance Cies Vce
- 11nF @ 10V
- Max Collector Current
- 75A
- Pin Sayısı
- 7
- Input
- Standard
- Gateemitter Voltagemax
- 20V
- Seri
- IGBTMOD™
- Vceon Max Vge Ic
- 3.7V @ 15V, 75A
- RoHS
- Non-Compliant
- Number Of Elements
- 2
- Input Capacitance
- 11nF
- Case Connection
- ISOLATED
- Collectoremitter Breakdown Voltage
- 1.2kV
- Eccn
- EAR99
- Polaritychannel Type
- N-CHANNEL
- Montaj
- Chassis Mount
- Terminal Formu
- UNSPECIFIED
- Montaj Tipi
- Chassis Mount
- Ntc Thermistor
- No
- Turn Off Timenom Toff
- 600 ns
- Transistor Application
- POWER CONTROL
- Terminal Pozisyonu
- UPPER
- Max Power Dissipation
- 600W
- Pin Sayısı
- 7
- Terminal Sayısı
- 7
- Kılıf / Paket
- Module
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