Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Obsolete
- Power Max
- 310W
- Current Collector Cutoff Max
- 1mA
- Turn On Time
- 100 ns
- Collector Emitter Voltage Vceo
- 3V
- Transistor Element Material
- SILICON
- Configuration
- Half Bridge
- Üretici Parça No
- CHRBM150/MT S828
- ECCN Kodu
- EAR99
- Input Capacitance Cies Vce
- 6.6nF @ 10V
- RoHS Durumu
- RoHS Compliant
- Max Collector Current
- 75A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 1998
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Seri
- IGBTMOD™
- Vceon Max Vge Ic
- 3V @ 15V, 75A
- Input Capacitance
- 6.6nF
- Number Of Elements
- 2
- RoHS
- Non-Compliant
- Collectoremitter Breakdown Voltage
- 600V
- Case Connection
- ISOLATED
- Input
- Standard
- Pin Sayısı
- 7
- Gateemitter Voltagemax
- 20V
- Terminal Pozisyonu
- UPPER
- Pin Sayısı
- 7
- Max Power Dissipation
- 310W
- Kılıf / Paket
- Module
- Vcesatmax
- 3 V
- Terminal Sayısı
- 7
- Ntc Thermistor
- No
- Montaj Tipi
- Chassis Mount
- Terminal Formu
- UNSPECIFIED
- Montaj
- Chassis Mount
- Polaritychannel Type
- N-CHANNEL
- Transistor Application
- POWER CONTROL
- Turn Off Timenom Toff
- 500 ns
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